硅锗电阻率和载流子浓度计算器

Resistivity and Concentration Calculators

To calculate silicon carrier concentration values, we use carrier mobility values derived from Thurber, Mattis, Liu, and Filliben, National Bureau of Standards Special Publication 400-64, The Relationship Between Resistivity and Dopant Density for Phosphorus-and Boron-Doped Silicon (May 1981), Table 10, Page 34 and Table 14, Page 40.

To calculate germanium carrier concentration values, we use carrier mobility values derived from D. B. Cuttriss, Bell System Technical Journal (March 1961) Page 509

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InputOutputFunction Buttons
Resistivity (ohm-cm)P ConcentrationN Concentration 
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Concentration (cm-3)P ResistivityN Resistivity 
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Show number using scientific notation to an accuracy of decimal places.

Note: N type silicon concentrations derived from resistivities less than 1e-3 are approximated, and will not agree with those from Thurber’s formulas. At low concentrations, near the intrinsic level, no consideration is made for the effect of minority carriers.记住当P型参杂浓度相当低，低到小于1E-3时请不要使用特贝尔公式计算，因为低参杂浓度和本征浓度相当时，没必要考虑有效少子浓度。另外公式中使用体浓度推算Rs，所以需要知道Boron implant的Dose、还有能量，才能查到入射深度和入射半径，最终得到体浓度